• DocumentCode
    2970004
  • Title

    Analogue Dynamic Supply Voltage L-band GaN High Power Amplifier with Improvement of Efficiency and Linearity

  • Author

    Matsunaga, Kohji ; Tanomura, Masahiro ; Nakayama, Tatsuo ; Ando, Yuji ; Miyamoto, Hironobu ; Shimawaki, Hidenori

  • Author_Institution
    NEC Corp., Otsu
  • fYear
    2007
  • fDate
    3-8 June 2007
  • Firstpage
    1107
  • Lastpage
    1110
  • Abstract
    This paper describes an analogue dynamic gate supply voltage L-band 10W GaN power amplifier which can provide improved efficiency and linearity for two tone and WCDMA signals. The developed analogue dynamic supply voltage method employs an envelope detector and a high speed low power dissipation CMOS level shift converter. The dynamic gate supply voltage is adjusted with the instantaneous input power. This simple method achieved a 6dB reduction in IM3 at 30dBm and 10% improvement of drain efficiency at IM3 of -20dBc.
  • Keywords
    CMOS integrated circuits; UHF integrated circuits; UHF power amplifiers; code division multiple access; gallium compounds; low-power electronics; wide band gap semiconductors; CMOS level shift converter; GaN; L-band; UHF; WCDMA; analogue dynamic supply voltage; efficiency improvement; envelope detector; high power amplifier; linearity improvement; power 10 W; Envelope detectors; FETs; Gallium nitride; High power amplifiers; L-band; Linearity; Power amplifiers; RF signals; Radiofrequency amplifiers; Voltage; GaN; analogue dynamic voltage; efficiency; linearity; power amplifiers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium, 2007. IEEE/MTT-S International
  • Conference_Location
    Honolulu, HI
  • ISSN
    0149-645X
  • Print_ISBN
    1-4244-0688-9
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2007.380287
  • Filename
    4264021