DocumentCode
2970195
Title
Electromigration testing on via line structures with a SWEAT method in comparison to standard package level tests
Author
Zitzelsberger, Anke ; Pietsch, Andreas ; Hagen, Jochen V.
Author_Institution
Infineon Technol. AG, Munich, Germany
fYear
2000
fDate
2000
Firstpage
57
Lastpage
60
Abstract
Two electromigration test methods are compared with the aim to find out if highly accelerated tests can be used to quantify the reliability of metallization. Experimental results show a good correlation between wafer level (WL) SWEAT and conventional standard package level (PL) tests on via terminated structures. Similar t50N values are obtained extrapolating the data from both tests to norm conditions. Failure analysis show the same failure mechanism for both tests. We found a difference in current density exponent, which can partly be explained with an error in the temperature determination of the failed metal line. As a consequence the SWEAT method can not only be used for process monitoring but also to quantify the reliability of metallization. However the difference in current density exponent needs further investigation
Keywords
current density; electromigration; failure analysis; life testing; metallisation; reliability; SWEAT method; accelerated testing; current density exponent; electromigration testing; failure analysis; metallization reliability; package-level testing; process monitoring; via line structure; wafer-level testing; Condition monitoring; Current density; Electromigration; Failure analysis; Life estimation; Metallization; Packaging; Temperature; Testing; Wafer scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report, 2000 IEEE International
Conference_Location
Lake Tahoe, CA
Print_ISBN
0-7803-6392-2
Type
conf
DOI
10.1109/IRWS.2000.911901
Filename
911901
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