DocumentCode
2970341
Title
Non-resonant detection of terahertz radiation by nanometer field effect transistors
Author
Meziani, Y.M. ; Lusakowski, J. ; Dyakonova, N. ; Knap, W. ; Seliuta, D. ; Sirmulis, E. ; Devenson, J. ; Valusis, G. ; Boeuf, F. ; Skotnick, T.
Author_Institution
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
Volume
1
fYear
2005
fDate
19-23 Sept. 2005
Firstpage
269
Abstract
Field effect transistors (FET´s) with a nanometer gate length can act as detectors for terahertz radiation using the plasma wave instability predicted by Dyakonov and Shur. We present the nonresonant detection observed at room temperature for FETs with 30 nm gate length. We discuss possibility to observe a voltage tunable resonant detection.
Keywords
MOSFET; plasma instability; plasma waves; submillimetre wave detectors; 30 nm; nanometer field effect transistor; nonresonant detection; plasma wave instability; terahertz radiation; Charge carrier density; Electrons; FETs; Frequency; Plasma temperature; Plasma waves; Radiation detectors; Resonance; Tunable circuits and devices; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz 2005. The Joint 30th International Conference on
Print_ISBN
0-7803-9348-1
Type
conf
DOI
10.1109/ICIMW.2005.1572512
Filename
1572512
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