• DocumentCode
    2970390
  • Title

    Improving the accuracy of “Shift and Ratio” channel length extraction method in deep submicron technology

  • Author

    Ye, Qiuyi ; Li, Yujun ; Tonti, W. ; Berry, W. ; Parks, C. ; Mohler, R.

  • Author_Institution
    Infineon Technol., Hopewell Junction, NY, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    102
  • Lastpage
    103
  • Abstract
    An improvement over the existing “Shift and Ratio” (S&R) algorithm for extracting effective channel length (Leff ) in deep submicrometer MOSFETs has been developed. This electrical to physical correlation is needed in order to assess MOSFET reliability over the channel length spectrum. The limitations of S&R algorithm are discussed in the context of independent technologies. A correction factor is introduced and has been shown to improve the widely used S&R technique
  • Keywords
    MOSFET; carrier mobility; semiconductor device models; semiconductor device reliability; MOSFET reliability; S&R algorithm; channel length extraction method; correction factor; deep submicron technology; electrical to physical correlation; independent technologies; shift and ratio method; Data mining; Electric variables measurement; Fabrication; Implants; MOSFET circuits; Microelectronics; Random access memory; Research and development; Rivers; Thickness measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report, 2000 IEEE International
  • Conference_Location
    Lake Tahoe, CA
  • Print_ISBN
    0-7803-6392-2
  • Type

    conf

  • DOI
    10.1109/IRWS.2000.911910
  • Filename
    911910
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2970390