The different gate oxide degradation mechanism under constant voltage/current stress and ramp voltage stress

In this study experiments such as constant voltage, constant current, ramp voltage have been done on gate oxide with 20 nm thickness. IV characteristics and CV characteristics after stress have been studied to investigate the gate oxide degradation mechanism. Our experimental results are different from those reported before. The charge inducing oxide degradation is different under different accelerated stresses. The paper explains the experimental results under different accelerated stress