GaN HEMT 60W Output Power Amplifier with Over 50% Efficiency at C-Band 15% Relative Bandwidth Using Combined Short and Open Circuited Stubs

Author

Iyomasa, Kazuhiro ; Yamanaka, Koji ; Mori, Kazutomi ; Noto, Hifumi ; Ohtsuka, Hiroshi ; Nakayama, Masatoshi ; Yoneda, Satoshi ; Kamo, Yoshitaka ; Isota, Yoji

Author_Institution

Mitsubishi Electr. Corp., Kamakura

fYear

2007

fDate

3-8 June 2007

Firstpage

1255

Lastpage

1258

Abstract

In this paper, a broadband high efficiency amplifier is proposed, which uses both short and open circuited stubs for simultaneous broadband impedance matching for fundamental frequency and 2^nd-harmonic. The developed GaN HEMT amplifier with 16 mm gate periphery has achieved over 60 W output power with over 50% drain efficiency (over 45% power-added-efficiency) across 15% relative bandwidth at C-Band. This is the state-of-the-art efficiency of GaN HEMT high power amplifier with over 50 W output power at C-band to the best of our knowledge.

Keywords

HEMT circuits; gallium compounds; high electron mobility transistors; impedance matching; microwave power amplifiers; wide band gap semiconductors; C-Band; GaN; GaN HEMT power amplifier; broadband high efficiency amplifier; broadband impedance matching; high electron mobility transistors; open circuited stubs; power 60 W; short circuited stubs; Bandwidth; Broadband amplifiers; Circuits; Frequency; Gallium nitride; HEMTs; High power amplifiers; Impedance matching; Power amplifiers; Power generation; broadband amplifier; high efficiency; power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium, 2007. IEEE/MTT-S International

Conference_Location

Honolulu, HI

ISSN

0149-645X

Print_ISBN

1-4244-0688-9

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2007.380396

Filename

4264059