Optimization of RF performance of MIM Damascene Capacitors in Backend of Line

Author

Piquet, J. ; Bermond, C. ; Thomas, M. ; Farcy, A. ; Lacrevaz, T. ; Vo, T.T. ; Torres, J. ; Fléchet, B.

Author_Institution

Univ. de Savoie, Le Bourget

fYear

2007

fDate

3-8 June 2007

Firstpage

1761

Lastpage

1764

Abstract

High frequency characterizations and simulations of advanced metal-insulator-metal (MIM) capacitors in Cu/low-k backend interconnection process are presented. First, we focus on the impact of silicon substrate and design of MIM capacitors on high frequency performance. Numerical results obtained by a 3D electromagnetic modeling are validated by comparison to experimental results. Second, we show the possibility to increase HF electrical performance of MIM capacitor with optimized design and integration of new medium or high-k materials.

Keywords

MIM devices; capacitors; copper; radiofrequency integrated circuits; silicon; 3D electromagnetic modeling; Cu/low-k backend interconnection process; MIM damascene capacitors; RF performance optimization; high frequency characterizations; metal-insulator-metal capacitors; radiofrequency analog integrated circuits; silicon substrate; Capacitance; Copper; Dielectric substrates; Electrodes; High K dielectric materials; Integrated circuit interconnections; MIM capacitors; Q factor; Radio frequency; Silicon; MIM damascene capacitor; cut-off frequency; high frequency measurement; medium-k dielectric; quality factor;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium, 2007. IEEE/MTT-S International

Conference_Location

Honolulu, HI

ISSN

0149-645X

Print_ISBN

1-4244-0688-9

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2007.380070

Filename

4264195