Microwave permittivity of As and B implanted and annealed silicon

Author

Lojek, B. ; Song, H. ; Mulcahy, T.

Author_Institution

Atmel Corp., Colorado Springs, CO, USA

fYear

2009

fDate

Sept. 29 2009-Oct. 2 2009

Firstpage

1

Lastpage

8

Abstract

The absorption of energy from electromagnetic fields always involves the conversion of electromagnetic energy into the heat. Dissipated power density is proportional to dielectric loss. In this work we investigate dielectric loss (complex permittivity) of intrinsic and extrinsic Cz and Fz silicon in the X microwave band. The mechanism of the interaction of microwave irradiation with non-polar elemental semiconductors is discussed.

Keywords

annealing; arsenic; boron; dielectric losses; elemental semiconductors; permittivity; silicon; Si:As; Si:B; X microwave band; annealed silicon; complex permittivity; dielectric loss; dissipated power density; electromagnetic energy conversion; electromagnetic fields; energy absorption; microwave irradiation; microwave permittivity; nonpolar elemental semiconductors; Annealing; Chemical technology; Dielectric losses; Electromagnetic heating; Electromagnetic wave absorption; Microwave devices; Microwave technology; Permittivity; Silicon; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Thermal Processing of Semiconductors, 2009. RTP '09. 17th International Conference on

Conference_Location

Albany, NY

ISSN

1944-0251

Print_ISBN

978-1-4244-3814-3

Electronic_ISBN

1944-0251

Type

conf

DOI

10.1109/RTP.2009.5373431

Filename

5373431