SiC based Field Effect Transistor for H2S detection

Experimental characterization and quantum chemical calculations were performed to evaluate the performance of a SiC based Field Effect Transistors with Pt and Ir gates as H₂S sensors. The sensors were tested against various concentrations of H₂S gas at the operating temperature between 150 and 350 °C. It was observed that Ir was very sensitive and selective to H₂S at 350 °C. This phenomenon was studied further by comparing the reaction energy when H₂S is exposed to Pt and Ir with density functional theory (DFT) calculations.