DocumentCode
2976813
Title
Design and Simulation of a Novel Nano Structure Quantum Well Voltage Regulator to have a Lower Regulated Voltage
Author
Shabani, Pejman ; Ganji, Jabbar
Author_Institution
Electr. Eng. Dept., Shahid Chamran Univ., Ahvaz
fYear
2009
fDate
11-13 Feb. 2009
Firstpage
88
Lastpage
91
Abstract
In this paper we present a novel nano structure quantum well voltage regulator (QWVR) to regulate a voltage in very low voltages, that can be used in low voltage and low power IC´s. This structure is based on the double electron layer tunneling transistor (DELTT). We used the depletion mode MOSFET in series with the DELTT and before it to eliminate higher states of resonant tunneling current. Simulation results show that the voltage regulation is occurred around 0.3 v. A desired regulated voltage is obtained with a specific value of the thickness and the concenturation of the GaAs and the AlGaAs epilayers. To simulating the proposed structure, the stationary viscous quantum hydrodynamic model has been used.
Keywords
III-V semiconductors; MOSFET; gallium arsenide; nanotechnology; quantum well devices; resonant tunnelling devices; voltage regulators; GaAs; depletion mode MOSFET; double electron layer tunneling transistor; epilayers; low power IC; nanostructure quantum well voltage regulator; resonant tunneling current; viscous quantum hydrodynamic model; voltage 0.3 V; voltage regulation; Contacts; Electrons; Gallium arsenide; Hydrodynamics; Low voltage; MOSFET circuits; Regulators; Resonance; Resonant tunneling devices; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices, 2009. CDE 2009. Spanish Conference on
Conference_Location
Santiago de Compostela
Print_ISBN
978-1-4244-2838-0
Electronic_ISBN
978-1-4244-2839-7
Type
conf
DOI
10.1109/SCED.2009.4800437
Filename
4800437
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