• DocumentCode
    2976813
  • Title

    Design and Simulation of a Novel Nano Structure Quantum Well Voltage Regulator to have a Lower Regulated Voltage

  • Author

    Shabani, Pejman ; Ganji, Jabbar

  • Author_Institution
    Electr. Eng. Dept., Shahid Chamran Univ., Ahvaz
  • fYear
    2009
  • fDate
    11-13 Feb. 2009
  • Firstpage
    88
  • Lastpage
    91
  • Abstract
    In this paper we present a novel nano structure quantum well voltage regulator (QWVR) to regulate a voltage in very low voltages, that can be used in low voltage and low power IC´s. This structure is based on the double electron layer tunneling transistor (DELTT). We used the depletion mode MOSFET in series with the DELTT and before it to eliminate higher states of resonant tunneling current. Simulation results show that the voltage regulation is occurred around 0.3 v. A desired regulated voltage is obtained with a specific value of the thickness and the concenturation of the GaAs and the AlGaAs epilayers. To simulating the proposed structure, the stationary viscous quantum hydrodynamic model has been used.
  • Keywords
    III-V semiconductors; MOSFET; gallium arsenide; nanotechnology; quantum well devices; resonant tunnelling devices; voltage regulators; GaAs; depletion mode MOSFET; double electron layer tunneling transistor; epilayers; low power IC; nanostructure quantum well voltage regulator; resonant tunneling current; viscous quantum hydrodynamic model; voltage 0.3 V; voltage regulation; Contacts; Electrons; Gallium arsenide; Hydrodynamics; Low voltage; MOSFET circuits; Regulators; Resonance; Resonant tunneling devices; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices, 2009. CDE 2009. Spanish Conference on
  • Conference_Location
    Santiago de Compostela
  • Print_ISBN
    978-1-4244-2838-0
  • Electronic_ISBN
    978-1-4244-2839-7
  • Type

    conf

  • DOI
    10.1109/SCED.2009.4800437
  • Filename
    4800437