Comparative study of Laterally Asymmetric Channel and conventional MOSFETs

In this work, we present a comparative study of the static and high-frequency performance of laterally asymmetric channel (LAC) MOSFETs and conventional devices. Simulations were carried out by means of an ensemble Monte Carlo simulator, taking into account a realistic variation of the doping profile in the channel of the LAC. In the case of the conventional device, an homogeneous doping is chosen to provide the same threshold voltage value than for the LAC MOSFET. Results show that the use of asymmetric doping provides a higher transconductance and improved cut-off frequency, as well as improved values for the main noise circuital figures of merit.