Modeling and simulation of CMOS APS

Author

Blanco-Filgueira, Beatriz ; López, Paula ; Cabello, Diego ; Ernst, J. ; Neubauer, H. ; Hauer, Johann

Author_Institution

Dept. of Electron. & Comput. Sci., Univ. of Santiago de Compostela, Santiago de Compostela

fYear

2009

fDate

11-13 Feb. 2009

Firstpage

120

Lastpage

123

Abstract

This work studies the importance of the peripheral collection in the overall photoresponse in deep sub-micron CMOS 3T active pixel sensors (APS), focusing on the contribution of the bottom surface of the depletion region. We analyze a semi-analytical expression, inspired by previous works, that models the photoresponse of a set of fabricated pixels with octagonal photodiodes that could be easily extended to different geometries. Device simulation results are used to study the behaviour of these structures with the purpose of using computer aided design (CAD) tools for the next technological nodes research.

Keywords

CMOS image sensors; photodiodes; CMOS APS simulation; active pixel sensor; complementary metal-oxide semiconductor; computer aided design; deep submicron CMOS three transistor APS; octagonal photodiode; peripheral collection; photoresponse estimation; pixel fabrication process; CMOS image sensors; CMOS process; CMOS technology; Charge coupled devices; Computational modeling; Computer simulation; Geometry; Photodiodes; Semiconductor device modeling; Solid modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices, 2009. CDE 2009. Spanish Conference on

Conference_Location

Santiago de Compostela

Print_ISBN

978-1-4244-2838-0

Electronic_ISBN

978-1-4244-2839-7

Type

conf

DOI

10.1109/SCED.2009.4800445

Filename

4800445