DocumentCode
2977101
Title
Monte Carlo Simulation of Sb-based Heterostructures
Author
Rodilla, H. ; Gonzailez, T. ; Pardo, D. ; Mateos, J.
Author_Institution
Dipt. Fis. Aplic., Univ. de Salamanca, Salamanca
fYear
2009
fDate
11-13 Feb. 2009
Firstpage
152
Lastpage
155
Abstract
Narrow band gap semiconductors have become a great option to increase mobility and operation frequency in high electron mobility transistors (HEMTs). In this work, two different narrow band gap semicoductors, InAs and InSb, and their associated heterostructures, AlSb/InAs and AlInSb/InSb, have been studied by means of Monte Carlo simulations.
Keywords
III-V semiconductors; Monte Carlo methods; aluminium compounds; high electron mobility transistors; indium compounds; narrow band gap semiconductors; semiconductor device models; AlInSb-InSb; AlSb-InAs; HEMT; InAs; InSb; Monte Carlo simulation; high electron mobility transistors; narrow band gap semiconductors; Analytical models; Discrete event simulation; Effective mass; Electron devices; Electron mobility; HEMTs; Impact ionization; MODFETs; Narrowband; Photonic band gap;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices, 2009. CDE 2009. Spanish Conference on
Conference_Location
Santiago de Compostela
Print_ISBN
978-1-4244-2838-0
Electronic_ISBN
978-1-4244-2839-7
Type
conf
DOI
10.1109/SCED.2009.4800453
Filename
4800453
Link To Document