Electrical characterization of ZrO2-based MIS structures with highly doped Si substrates

Zirconium oxide based metal-insulator-semiconductor (MIS) capacitors with highly doped Si substrates have been studied by electrical characterization. ZrO₂ thin films were grown by atomic layer epostion (ALD), using ZrCp(NMe₂)₃ as precursor (with Cp=C₅H₅ and Me=CH₃). The electrical measurements were carried out by using current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G-V) techniques. C-V and G-V curves indicated the behaviour of the interface states according to the frequency. Experimental evidence about tunnel conduction and bulk-controlled current, Poole-Frenkel effect, has been observed in different ranges of voltage.