An analysis on turn-off behaviour of 1.2kV NPT-CIGBT under clamped inductive load switching

Author

Kong, S.T. ; Ngwendson, L. ; Sweet, M. ; Narayanan, E. M Sankara

Author_Institution

Univ. of Sheffield, Sheffield

fYear

2008

fDate

1-3 Sept. 2008

Firstpage

43

Lastpage

47

Abstract

For the first time, this paper analyses the turn-off-behaviour of the planar 1.2 kV/25 A NPT-CIGBT under clamped inductive load switching in detail through experiment and simulation. Turn-off behaviour of the CIGBT involves strong interaction between device and circuit parameters. The circuit parameter such as gate resistance was varied, in order to observe the di/dt, dv/dt and turn-off energy loss of the device. Experimental results are shown at 25degC and 125degC. In addition, numerical simulation results are used to enhance understanding of the internal physics of the NPT-CIGBT turn-off process.

Keywords

insulated gate bipolar transistors; power bipolar transistors; power semiconductor switches; NPT-CIGBT; clamped inductive load switching; clustered insulated gate bipolar transistor; current 25 A; gate resistance; temperature 125 C; temperature 25 C; turn-off energy loss; voltage 1.2 kV; Analytical models; Anodes; Cathodes; Circuit simulation; Circuit topology; Energy loss; Insulated gate bipolar transistors; Power semiconductor switches; Protection; Voltage; Device characteristics; Power Semiconductor Device;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Motion Control Conference, 2008. EPE-PEMC 2008. 13th

Conference_Location

Poznan

Print_ISBN

978-1-4244-1741-4

Electronic_ISBN

978-1-4244-1742-1

Type

conf

DOI

10.1109/EPEPEMC.2008.4635242

Filename

4635242