High Optical Quality of InAs Quantum Dots with an InAlAsSb Strain-Reducing Layer

Author

Chiu, Pei-Chin ; Liu, Wei-Sheng ; Shiau, Meng-Jie ; Chyi, Jen-Inn ; Chen, Wen-Yen ; Chang, Hsing-Szu ; Hsu, Tzu-Min

Author_Institution

Nat. Central Univ., Jhongli

fYear

2007

fDate

14-18 May 2007

Firstpage

171

Lastpage

173

Abstract

The effects of a thin InAlAsSb strain-reducing layer (SRL) on the optical properties of InAs/GaAs quantum dots (QDs) are studied. The adoption of the InAlAsSb SRL results in higher emission intensity and better size uniformity than its InAlAs counterpart. InAs QDs capped with the InAlAsSb SRL reveal a large state separation of 103 meV and thermal activation energy of 530 meV. The increase in radiative efficiency and temperature stability is attributed to high carrier confinement and reduced defects by the InAlAsSb SRL.

Keywords

aluminium compounds; gallium arsenide; indium compounds; optical materials; photoluminescence; semiconductor epitaxial layers; semiconductor quantum dots; thermal stability; InAlAsSb; InAs-GaAs; carrier confinement; emission intensity; optical quality; photoluminescence; quantum dots; radiative efficiency; temperature stability; thermal activation energy; thin strain-reducing layer; Carrier confinement; Gallium arsenide; Indium compounds; Indium gallium arsenide; Laser excitation; Luminescence; Quantum dot lasers; Quantum dots; Stimulated emission; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on

Conference_Location

Matsue

ISSN

1092-8669

Print_ISBN

1-4244-0875-X

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2007.381149

Filename

4265906