An Optoelectronic Switch with Multiple Operation States

Author

Guo, Der-Feng ; Tsai, Jung-Hui ; Weng, Tzu-Yen

Author_Institution

Air Force Acad., Kaohsiung

fYear

2007

fDate

14-18 May 2007

Firstpage

252

Lastpage

255

Abstract

A Schottky-contact triangular-barrier optoelectronic switch (STOS), grown by molecular beam epitaxy (MBE), has been fabricated. The triangular barrier, formed by inserting an InGaAs delta-doped (delta-doped) quantum well into an n^--GaAs layer, provides a potential well for hole accumulation. Due to the hole accumulation in the delta-doped well and the sequential avalanche multiplications in the reverse-biased pn and metal-semiconductor (M-S) junctions, a double S-shaped negative-differential-resistance (NDR) phenomenon is observed in the current-voltage (I-V) characteristics. The STOS shows a flexible optical function related to the triangular barrier height controllable by incident light. The multistate is switchable by both optical and electrical inputs.

Keywords

Schottky barriers; avalanche breakdown; electro-optical switches; molecular beam epitaxial growth; optoelectronic devices; p-n junctions; quantum wells; semiconductor-metal boundaries; InGaAs delta-doped quantum well; MBE growth; STOS; Schottky-contact triangular-barrier optoelectronic switch; current-voltage characteristics; double S-shaped negative-differential-resistance phenomenon; hole accumulation; metal-semiconductor junction; molecular beam epitaxy; multiple operation states; n^--GaAs layer; reverse-biased pn junction; sequential avalanche multiplication; Communication switching; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Optical bistability; Optical switches; Potential well; Stimulated emission; Substrates; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on

Conference_Location

Matsue

ISSN

1092-8669

Print_ISBN

1-4244-0875-X

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2007.381171

Filename

4265928