Epitaxial Lateral Overgrowth of InP in Micro Line and Submicro Mesh Openings

Author

Olsson, F. ; Xie, Meihua ; Gerard, F. ; Alija, A.R. ; Prieto, I. ; Postigo, P.A. ; Lourdudossa, S.

Author_Institution

R. Inst. of Technol., Kista

fYear

2007

fDate

14-18 May 2007

Firstpage

311

Lastpage

314

Abstract

Towards achieving a large area of InP on silicon, a study of ELOG of InP on InP has been undertaken on lines with different orientations and with openings that are 100 mum long and 10 mum wide. This knowledge has been transposed on sub-micro mesh structures. By this method we have obtained 2 mum thick InP on a mesh patterned InP. The layer exhibits room temperature photoluminescence (PL) with a full width half maximum of 24 nm. We propose that this intensity can be increased if nano-sized openings are used.

Keywords

III-V semiconductors; indium compounds; nanostructured materials; photoluminescence; semiconductor epitaxial layers; semiconductor growth; ELOG; InP-InP; epitaxial lateral overgrowth; micro line; nano-sized openings; photoluminescence; size 2 mum; submicro mesh structures; temperature 293 K to 298 K; High speed optical techniques; Indium phosphide; Monolithic integrated circuits; Optical devices; Optical fiber communication; Optical films; Optical filters; Optical materials; Photonics; Silicon on insulator technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on

Conference_Location

Matsue

ISSN

1092-8669

Print_ISBN

1-4244-0875-X

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2007.381186

Filename

4265943