DocumentCode
2978646
Title
Incorporation Behaviors of Group V Elements in GaAsSbN Grown by Gas Source Molecular Beam Epitaxy
Author
Ma, Ta-Chun ; Lin, Yan-Ting ; Chen, Tsung-Yi ; Chou, Li-Chang ; Lin, Hao-Hsiung
Author_Institution
Nat. Taiwan Univ., Taipei
fYear
2007
fDate
14-18 May 2007
Firstpage
350
Lastpage
353
Abstract
We report the incorporation behaviors of Sb and N in GaAsSbN epilayers grown by gas source molecular beam epitaxy. Our study reveals that N incorporation is independent of the growth temperature and the Sb flux. Lattice-matched GaAsSbN layers show lower energy gaps than those of InGaAsN reported in literatures. The lowest energy gap achieved in this study is 0.79 eV.
Keywords
gallium arsenide; gallium compounds; molecular beam epitaxial growth; GaAsSbN; gas source molecular beam epitaxy; group V element; lattice-matched GaAsSbN layer; Conference proceedings; Gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Nitrogen; Plasma sources; Plasma temperature; Radio frequency; Substrates; Tellurium;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location
Matsue
ISSN
1092-8669
Print_ISBN
1-4244-0875-X
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2007.381195
Filename
4265952
Link To Document