High-performance GaInNAs Long-wavelength Lasers

Author

Kitatani, T. ; Kasai, J. ; Nakahara, K. ; Adachi, K. ; Aoki, M.

Author_Institution

Hitachi, Ltd., Tokyo

fYear

2007

fDate

14-18 May 2007

Firstpage

354

Lastpage

357

Abstract

High-performance GalnNAs/GaAs triple quantum well (TQW) edge-emitting lasers were demonstrated. Al-free molecular beam epitaxy (MBE) is effective to prevent any Al impurity or contamination, which had appeared in previous GalnNAs materials, leading to a significant improvement in the photoluminescence intensity. By using this growth method, we have successfully grown highly-strained GalnNAs/GaAs TQW lasers that exhibit a record low threshold current of 4.4 mA at 25degC and a 40-Gbit/s direct modulation at 5degC. These results indicate that GalnNAs lasers are good candidates for future high-frequency operation cost-effective light sources.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; optical modulation; photoluminescence; quantum well lasers; semiconductor growth; wide band gap semiconductors; Al-free molecular beam epitaxy; GaInNAs-GaAs; MBE; bit rate 40 Gbit/s; current 4.4 mA; high-performance long-wavelength lasers; highly-strained TQW lasers; light sources; optical modulation; photoluminescence intensity; quantum well growth method; temperature 25 C; temperature 5 C; triple quantum well edge-emitting lasers; Cells (biology); Contamination; Gallium arsenide; MOCVD; Molecular beam epitaxial growth; Optical materials; Plasma temperature; Quantum well lasers; Substrates; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on

Conference_Location

Matsue

ISSN

1092-8669

Print_ISBN

1-4244-0875-X

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2007.381196

Filename

4265953