DocumentCode
2979553
Title
Single Photon Emission From an InGaAs Quantum Dot Precisely Positioned on a Nano-Plane
Author
Hsieh, Tung-Po ; Chyi, Jen-Inn ; Chang, Hsiang-Szu ; Chen, Wen-Yen ; Hsu, Tzu Min
Author_Institution
Nat. Central Univ., Jhongli
fYear
2007
fDate
14-18 May 2007
Firstpage
551
Lastpage
554
Abstract
This work demonstrates single photon emissions from a site-controlled quantum dot (QD) grown on a self-constructed nano plane. The size of the nano plane on the micron-sized multi-facet structure is accurately controlled by a low surface reducing rate (~16 nm/min). Single QD spectral lines were resolved and identified. The anti-bunching behavior reveals that single photons are emitted from the positioned QD.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; photon antibunching; quantum optics; semiconductor quantum dots; InGaAs; antibunching behavior; micron-sized multifacet structure; self-constructed nano plane; semiconductor quantum dots; single QD spectral lines; single photon emission; site-controlled quantum dot growth; Atom optics; Buffer layers; Gallium arsenide; Indium gallium arsenide; Optical surface waves; Quantum computing; Quantum dots; Size control; Substrates; Surface morphology;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on
Conference_Location
Matsue
ISSN
1092-8669
Print_ISBN
1-4244-0875-X
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2007.381250
Filename
4266007
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