DocumentCode
2980624
Title
High-speed single-electron memory: cell design and architecture
Author
Mizuta, Hiroshi ; Williams, David ; Katayama, Kozo ; Muller, Heinz-Olaf ; Nakazato, Kazuo ; Ahmed, Haroon
Author_Institution
Cambridge Lab., Hitachi Eur. Ltd., Cambridge, UK
fYear
1998
fDate
12-13 Mar 1998
Firstpage
67
Lastpage
72
Abstract
A new silicon-based single-electron memory cell is presented for use as a high-speed RAM. Novel architecture and operation schemes are evaluated by conducting Monte Carlo single-electron simulations. By performing transient waveform analysis, a high-speed write operation is demonstrated with a write time shorter than 10 nsec
Keywords
Monte Carlo methods; memory architecture; quantum interference devices; random-access storage; semiconductor storage; transient analysis; waveform analysis; 10 ns; Monte Carlo simulation; RAM; Si; architecture; cell design; high speed single electron memory; transient waveform analysis; Analytical models; Circuit simulation; Electrodes; Hysteresis; Laboratories; Magnetic tunneling; Random access memory; Single electron memory; Voltage; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
Physics and Modeling of Devices Based on Low-Dimensional Structures, 1998. Proceedings., Second International Workshop on
Conference_Location
Aizu-Wakamatsu
Print_ISBN
0-8186-8682-0
Type
conf
DOI
10.1109/LDS.1998.714536
Filename
714536
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