InGaP/InGaAs MOS-PHEMT with A Liquid Phase Oxidized InGaP Gate Insulator

Author

Lin, Hsien-Chang ; Lee, Kuan-Wei ; Tu, Chao Hsien ; Sze, Po-Wen ; Wang, Yeong-Her

Author_Institution

Nat. Cheng-Kung Univ., Tainan

fYear

2007

fDate

20-22 Dec. 2007

Firstpage

181

Lastpage

184

Abstract

An InGaP/InGaAs/GaAs metal-oxide- semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) with a thin InGaP native oxide layer as the gate insulator has been demonstrated. The MOS-PHEMTs exhibit higher maximum drain current density, larger gate-swing voltage, larger gate-to-drain breakdown voltage, and better noise performance in comparison with the conventional PHEMTs. This proves that the proposed MOS-PHEMT is promising for device applications.

Keywords

III-V semiconductors; MOSFET; current density; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; semiconductor device breakdown; semiconductor device noise; InGaP-InGaAs-GaAs; MOS-PHEMT; drain current density; gate-swing voltage; gate-to-drain breakdown voltage; liquid phase oxidized gate insulator; metal-oxide- semiconductor pseudomorphic high-electron-mobility transistor; native oxide layer; noise performance; Chaos; Dielectric liquids; Etching; Gallium arsenide; HEMTs; Indium gallium arsenide; Insulation; MODFETs; Oxidation; PHEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on

Conference_Location

Tainan

Print_ISBN

978-1-4244-0637-1

Electronic_ISBN

978-1-4244-0637-1

Type

conf

DOI

10.1109/EDSSC.2007.4450092

Filename

4450092