• DocumentCode
    2981329
  • Title

    Evaluation of recent technologies of non-volatile RAM

  • Author

    Nuns, T. ; Duzellier, S. ; Bertrand, J. ; Hubert, G. ; Pouget, V. ; Darracq, F. ; David, J.P. ; Soonckindt, S.

  • Author_Institution
    Dept. Environnement Spatial (DESP), ONERA, Toulouse, France
  • fYear
    2007
  • fDate
    10-14 Sept. 2007
  • Firstpage
    1
  • Lastpage
    8
  • Abstract
    Two types of recent non-volatile random access memories (NVRAM) were evaluated for radiation effects: total dose and single event upset and latch-up under heavy ions and protons. Complementary irradiation with a laser beam provides information on sensitive areas of the devices.
  • Keywords
    radiation effects; random-access storage; heavy ions; non-volatile RAM; protons; radiation effects; recent technologies evaluation; Crystalline materials; EPROM; Ferroelectric films; Laser beams; Magnetoresistance; Manufacturing; Nonvolatile memory; Random access memory; Read-write memory; Space technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems, 2007. RADECS 2007. 9th European Conference on
  • Conference_Location
    Deauville
  • ISSN
    0379-6566
  • Print_ISBN
    978-1-4244-1704-9
  • Type

    conf

  • DOI
    10.1109/RADECS.2007.5205525
  • Filename
    5205525
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2981329