A single-chip 10 Gb/s transceiver LSI using SiGe SOI/BiCMOS

Author

Ueno, S. ; Watanabe, K. ; Kato, T. ; Shinohara, T. ; Mikami, K. ; Hashimoto, T. ; Takai, A. ; Washio, K. ; Takeyari, R. ; Harada, T.

Author_Institution

Device Dev. Center, Hitachi Ltd., Tokyo, Japan

fYear

2001

fDate

7-7 Feb. 2001

Firstpage

82

Lastpage

83

Abstract

A fully-integrated single-chip SiGe SOI/BiCMOS transceiver LSI for 10 Gb/s applications combines 4b FIFO, 10 GHz PLL, 16:1 MUX, 10 Gb/s input data decision circuit, clock and data-recovery circuit, 1:16 DeMUX, data loop back function, and self-testing using 2/sup 23/-1 PRBS generator. The die is 5.6/spl times/5.3 mm/sup 2/ and consumes 2.6 W from 3.3/2.5 V.

Keywords

BiCMOS digital integrated circuits; Ge-Si alloys; SONET; low-power electronics; optical communication equipment; semiconductor materials; silicon-on-insulator; synchronisation; transceivers; 10 Gbit/s; 2.5 V; 2.6 W; 3.3 V; PRBS generator; SOI/BiCMOS; SiGe; clock and data-recovery circuit; data loop back function; input data decision circuit; self-testing; transceiver LSI; BiCMOS integrated circuits; Clocks; Frequency; Germanium silicon alloys; Large scale integration; Optical receivers; Optical resonators; Optical transmitters; Silicon germanium; Transceivers;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2001. Digest of Technical Papers. ISSCC. 2001 IEEE International

Conference_Location

San Francisco, CA, USA

ISSN

0193-6530

Print_ISBN

0-7803-6608-5

Type

conf

DOI

10.1109/ISSCC.2001.912556

Filename

912556