Electrostatic mechanisms responsible for device degradation in AlGaN/AlN/GaN HEMTs

Author

Kalavagunta, A. ; Touboul, A. ; Shen, L. ; Schrimpf, R.D. ; Reed, R.A. ; Fleetwood, D.M. ; Jain, R.K. ; Mishra, U.K.

Author_Institution

Dept. of Electr. Eng., Vanderbilt Univ., Nashville, TN, USA

fYear

2007

fDate

10-14 Sept. 2007

Firstpage

1

Lastpage

7

Abstract

Displacement-damage induced degradation in AlGaN/AlN/GaN HEMTs with polarization charge induced 2DEGs is examined using simulations and experiments. Carrier removal in the unintentionally doped AlGaN layer changes the space charge in the structure and this changes the band bending. The band bending decreases the 2DEG density, which in turn reduces the drain current in the device. The effect of the defect energy levels on the 2DEG density is also studied. The interplay between carrier removal, mobility degradation, and the charged defects is analyzed and quantified.

Keywords

aluminium compounds; gallium compounds; high electron mobility transistors; 2DEG density; AlGaN-AlN-GaN; HEMT; band bending; carrier removal; device degradation; electrostatic mechanisms; high electron mobility transistor; mobility degradation; polarization charge induced 2DEG; Aluminum gallium nitride; Degradation; Electron mobility; Electrostatics; Gallium nitride; HEMTs; MODFETs; Polarization; Protons; Scattering; GaN; deep level traps; displacement damage; high electron mobility transistor (HEMT); polarization charge; proton radiation;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems, 2007. RADECS 2007. 9th European Conference on

Conference_Location

Deauville

ISSN

0379-6566

Print_ISBN

978-1-4244-1704-9

Type

conf

DOI

10.1109/RADECS.2007.5205538

Filename

5205538