DocumentCode
2982129
Title
Epitaxial graphene transistors on SiC substrates
Author
Kedzierski, Jakub ; Hsu, Pei-Lan ; Healey, Paul ; Wyatt, Peter ; Keast, Craig
Author_Institution
MIT Lincoln Lab., Lexington, MA
fYear
2008
fDate
23-25 June 2008
Firstpage
25
Lastpage
26
Abstract
Graphene holds great promise for future electronic technology. It has very high mobility even for thin films, and is compatible with high-k dielectrics. Thus while it is too early to speculate on graphene replacing silicon as the material of choice for electronics, the potential of carbon based devices should not be underestimated.
Keywords
electrical conductivity; electron mobility; epitaxial layers; graphene; hole mobility; thin film transistors; C; SiC; electron mobility; epitaxial graphene transistors; high-k dielectric; hole mobility; minimum conduction; standard micro-electronics method; Dielectric substrates; Furnaces; Hafnium oxide; High-K gate dielectrics; Laboratories; Optical films; Photonic band gap; Silicon carbide; Solid state circuits; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2008
Conference_Location
Santa Barbara, CA
ISSN
1548-3770
Print_ISBN
978-1-4244-1942-5
Electronic_ISBN
1548-3770
Type
conf
DOI
10.1109/DRC.2008.4800720
Filename
4800720
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