Self-aligned inversion-channel and D-mode InGaAs MOSFET using Al2O3/Ga2O3(Gd2O3as gate dielectrics

Author

Lin, T.D. ; Chen, Christine P. ; Chiu, H.C. ; Chang, Peter ; Lin, C.A. ; Hong, M. ; Kwo, J. ; Tsai, W.

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu

fYear

2008

fDate

23-25 June 2008

Firstpage

39

Lastpage

40

Abstract

The authors have successfully demonstrated self-aligned high-performance inversion-channel In_0.53Ga_0.47As MOSFETs using UHV-deposited nano-meter thick AI₂O₃/GGO dual-layer dielectrics and a TiN metal gate. Record-high drain current and transconductance, despite its challenging process, were achieved. Ring gate D-mode In_0.2Ga_0.8As MOSFETs using as a similar dual layer gate dielectric also exhibits very high current densities and transconductance.

Keywords

III-V semiconductors; MOSFET; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; tin compounds; Al₂O₃-Ga₂O₃(Gd₂O₃); D-mode MOSFET; InGaAs; TiN; UHV-deposition; dual-layer dielectrics; gate dielectrics; metal gate; nano-meter thick dielectrics; self-aligned inversion-channel; Aluminum oxide; Contact resistance; Dielectric devices; Dielectric materials; Indium gallium arsenide; MOSFET circuits; Rapid thermal processing; Thermal stability; Tin; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2008

Conference_Location

Santa Barbara, CA

ISSN

1548-3770

Print_ISBN

978-1-4244-1942-5

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2008.4800726

Filename

4800726