Low Temperature Polycrystalline Silicon TFTs on Polyimide and Glass Substrates

Author

Yang, Po-Chuan ; Chang, Hsu-Yu ; Yang, Chieh-Hung ; Hsueh, Chun-Yuan ; Lin, Hui-Wen ; Chang, Chi-Yang ; Lee, Si-Chen

Author_Institution

Nat. Taiwan Univ., Taipei

fYear

2007

fDate

20-22 Dec. 2007

Firstpage

519

Lastpage

522

Abstract

This paper presents results on low temperature poly-silicon thin film transistors (TFTs) prepared by KrF excimer laser annealing of hydrogenated amorphous silicon (a-Si:H) on polyimide and glass substrate. Two step laser annealing is used in dehydrogenation and crystallization of the a-Si:H into poly-Si on polyimide substrate. From the Raman spectrum, it is found that the crystallinity of the poly-Si on the polyimide substrate is better than that on the glass. The fabricated poly-Si TFT on polyimide shows a very good performance with field effect mobility of 370 cm²/V-sec and on/off current ratio > 10⁶.

Keywords

laser beam annealing; silicon; thin film transistors; KrF excimer laser annealing; Raman spectrum; TFT; field effect mobility; glass substrates; polycrystalline silicon; polyimide; thin film transistors; Active matrix liquid crystal displays; Annealing; Crystallization; Glass; Laser ablation; Polyimides; Silicon; Substrates; Temperature; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on

Conference_Location

Tainan

Print_ISBN

978-1-4244-0637-1

Electronic_ISBN

978-1-4244-0637-1

Type

conf

DOI

10.1109/EDSSC.2007.4450176

Filename

4450176