• DocumentCode
    2982675
  • Title

    Low Dit optimized Interfacial Layer using High-Density Plasma Oxidation and Nitridation in Germanium High-κ Gate stack

  • Author

    Thareja, Gaurav ; Kobayashi, Masaharu ; Oshima, Yasuhiro ; McVittie, James ; Griffin, Peter ; Nishi, Yoshio

  • Author_Institution
    Dept. of Electr. Eng., Stanford Univ., Stanford, CA
  • fYear
    2008
  • fDate
    23-25 June 2008
  • Firstpage
    87
  • Lastpage
    88
  • Abstract
    Low Dit interfacial GeOx, and GeOxNy are grown on Germanium using high density slot plane antenna (SPA) plasma oxidation and nitridation respectively. Excellent MOS characteristics are demonstrated for the Ge high-kappa gate stack with interfacial GeOx, and GeOxNy. GeOx interfacial layer significantly reduced interface state density (Dit) to as low as 3times1011 cm-2 eV-1.
  • Keywords
    germanium compounds; nitridation; oxidation; slot antennas; GeO; GeON; germanium high-kappa gate stack; high-density plasma nitridation; high-density plasma oxidation; optimized interfacial layer; slot plane antenna; Capacitance-voltage characteristics; Frequency; Germanium; High K dielectric materials; High-K gate dielectrics; MOS capacitors; Oxidation; Plasma measurements; Plasma properties; Plasma temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2008
  • Conference_Location
    Santa Barbara, CA
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-1942-5
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2008.4800747
  • Filename
    4800747
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2982675