• DocumentCode
    2982702
  • Title

    Self-Aligned n-channel MOSFET on InP and In0.53Ga0.47As Using Physical Vapor Deposition HfO2 and Silicon Interface Passivation Layer

  • Author

    Ok, Injo ; Kim, H. ; Zhang, M. ; Zhu, F. ; Zhao, H. ; Park, S. ; Yum, J. ; Garcia, Domingo ; Majhi, Prashant ; Goel, N. ; Tsai, W. ; Gaspe, C.K. ; Santos, M.B. ; Lee, Jack C.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX
  • fYear
    2008
  • fDate
    23-25 June 2008
  • Firstpage
    91
  • Lastpage
    92
  • Abstract
    Research on high-k (HfO2) materials has been expanded significantly. However, MOSFETs with high-k gate dielectrics on silicon still have several problems with relatively low mobility of high-k devices in thin EOT regime compared to the universal curve. In this work, as an alternative of silicon substrate, InP and In0.53Ga0.47As has been studied. W e present the material and electrical characteristics of TaN/HfO2/InP self-aligned n-MOSFET with PVD Si interface Passivation layer (IPL) under various post deposition anneal (PDA) conditions. We also demonstrated N-channel high-k InP and In0.53Ga0.47As MOSFETs with good transistor behavior.
  • Keywords
    III-V semiconductors; MOSFET; electric properties; passivation; substrates; vapour deposition; In0.53Ga0.47As; InP; PVD Si interface passivation layer; electrical characteristics; high-k devices; high-k gate dielectrics; high-k materials; low mobility; material characteristics; physical vapor deposition; post deposition anneal condition; self-aligned n-MOSFET; self-aligned n-channel MOSFET; silicon interface passivation layer; silicon substrate; thin EOT regime; universal curve; Atherosclerosis; Dielectric substrates; Electric variables; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Indium phosphide; MOSFET circuits; Passivation; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2008
  • Conference_Location
    Santa Barbara, CA
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-1942-5
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2008.4800749
  • Filename
    4800749