• DocumentCode
    2982775
  • Title

    Bond valence structure analysis of doped bismuth sodium titanate

  • Author

    Walsh, Conor J. ; Schulze, Walter A.

  • Author_Institution
    New York State Coll. of Ceramics, Alfred Univ., NY, USA
  • fYear
    2004
  • fDate
    23-27 Aug. 2004
  • Firstpage
    328
  • Lastpage
    331
  • Abstract
    This study focuses on a lead free, high temperature ceramic capacitor material having the base composition of (Bi0.5Na0.5)TiO3. The goal is to modify this structure to create a material that has X7R-like dielectric behavior, while maintaining its inherently good high temperature dielectric properties. This will alleviate some design problems and create a component that is less susceptible to drastic environmental changes. Industrial areas of interest include aerospace, well drilling and automotive. An extensive compositional experiment, along with theoretical modeling has been investigated to modify the base material to attain the goals set forth. A combination of dopants including barium, strontium, and tin, were used to modify the dielectric properties. The dielectric properties were promising, however the low temperature relative permittivity is still too low to meet the goal of the project.
  • Keywords
    barium; bismuth compounds; crystal structure; ferroelectric ceramics; permittivity; relaxor ferroelectrics; sodium compounds; strontium; tin; (Bi0.5Na0.5)TiO3; Ba; Sn; Sr; aerospace industry; automotive industry; bond valence structure; dielectric behavior; dopants; high temperature ceramic capacitor material; high temperature dielectric properties; low temperature relative permittivity; well drilling industry; Aerospace industry; Aerospace materials; Bismuth; Bonding; Ceramics; Composite materials; Dielectric materials; Environmentally friendly manufacturing techniques; Temperature; Titanium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 2004. ISAF-04. 2004 14th IEEE International Symposium on
  • ISSN
    1099-4734
  • Print_ISBN
    0-7803-8410-5
  • Type

    conf

  • DOI
    10.1109/ISAF.2004.1418403
  • Filename
    1418403