DocumentCode
2982775
Title
Bond valence structure analysis of doped bismuth sodium titanate
Author
Walsh, Conor J. ; Schulze, Walter A.
Author_Institution
New York State Coll. of Ceramics, Alfred Univ., NY, USA
fYear
2004
fDate
23-27 Aug. 2004
Firstpage
328
Lastpage
331
Abstract
This study focuses on a lead free, high temperature ceramic capacitor material having the base composition of (Bi0.5Na0.5)TiO3. The goal is to modify this structure to create a material that has X7R-like dielectric behavior, while maintaining its inherently good high temperature dielectric properties. This will alleviate some design problems and create a component that is less susceptible to drastic environmental changes. Industrial areas of interest include aerospace, well drilling and automotive. An extensive compositional experiment, along with theoretical modeling has been investigated to modify the base material to attain the goals set forth. A combination of dopants including barium, strontium, and tin, were used to modify the dielectric properties. The dielectric properties were promising, however the low temperature relative permittivity is still too low to meet the goal of the project.
Keywords
barium; bismuth compounds; crystal structure; ferroelectric ceramics; permittivity; relaxor ferroelectrics; sodium compounds; strontium; tin; (Bi0.5Na0.5)TiO3; Ba; Sn; Sr; aerospace industry; automotive industry; bond valence structure; dielectric behavior; dopants; high temperature ceramic capacitor material; high temperature dielectric properties; low temperature relative permittivity; well drilling industry; Aerospace industry; Aerospace materials; Bismuth; Bonding; Ceramics; Composite materials; Dielectric materials; Environmentally friendly manufacturing techniques; Temperature; Titanium compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 2004. ISAF-04. 2004 14th IEEE International Symposium on
ISSN
1099-4734
Print_ISBN
0-7803-8410-5
Type
conf
DOI
10.1109/ISAF.2004.1418403
Filename
1418403
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