• DocumentCode
    2983100
  • Title

    A novel 600V structure with Split P-Buried Floating Layer and doping trench

  • Author

    Tan Kaizhou ; Tang Zhaohuan ; Luo Jun ; Hu Shendong ; Shen Jun ; Cui Wei ; Zhang Jin

  • Author_Institution
    Nat. Lab. of Analog ICs, Chongqing, China
  • fYear
    2013
  • fDate
    22-25 Oct. 2013
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    A novel low on-resistance 600V structure with Split P-Buried Floating Layer(SBFL) and doping trench is proposed and demonstrated by simulation. This novel structure can overcome big reverse leakage current problem of conventional SBFL, and keep its low on-resistance advantage. Its specific on-resistance is 43% less than ideal parallel-plane junction stucture at 600V blocking voltage, from 73.3 mO.cm2 to 41.7 mO.cm2.
  • Keywords
    buried layers; doping profiles; electric resistance; leakage currents; semiconductor junctions; SBFL; doping trench; on-resistance advantage; reverse leakage current problem; split p-buried floating layer; voltage 600 V; Doping; Electric fields; Epitaxial growth; Junctions; Leakage currents; Semiconductor process modeling; Space charge; buried floating layer; doping trench; on-resistance; reverse leakage current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    TENCON 2013 - 2013 IEEE Region 10 Conference (31194)
  • Conference_Location
    Xi´an
  • ISSN
    2159-3442
  • Print_ISBN
    978-1-4799-2825-5
  • Type

    conf

  • DOI
    10.1109/TENCON.2013.6718849
  • Filename
    6718849
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2983100