Electrically tunable and switchable film bulk acoustic resonator

Author

Pang, Wei ; Zhang, Hao ; Yu, Hongyu ; Kim, Eun Sok

Author_Institution

Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA, USA

fYear

2004

fDate

23-27 Aug. 2004

Firstpage

22

Lastpage

26

Abstract

The paper describes an electrically tunable and switchable film bulk acoustic resonator (FBAR) that is formed by integrating an FBAR with an electrostatic MEMS actuator. Around ∼0.8% tuning of the series resonant frequency (Δf≅18 MHz) at 2.3 GHz is experimentally obtained with an electrostatic actuation voltage varying between 12.2 and 27.5 V. Also, a switchable resonator with Q (quality) factor of greater than 100 at 2.2 and 4.0 GHz is experimentally demonstrated in a compact device area.

Keywords

Q-factor; acoustic resonators; bulk acoustic wave devices; circuit tuning; electrostatic actuators; micromachining; thin film devices; 12.2 to 27.5 V; 2.2 to 4.0 GHz; FBAR; Q factor; electrically tunable film bulk acoustic resonator; electrostatic MEMS actuator; electrostatic actuation voltage; micromachining; quality factor; series resonant frequency; switchable film bulk acoustic resonator; Capacitors; Film bulk acoustic resonators; Filter bank; Micromechanical devices; Resonant frequency; Resonator filters; Tuning; Varactors; Voltage; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency Control Symposium and Exposition, 2004. Proceedings of the 2004 IEEE International

ISSN

1075-6787

Print_ISBN

0-7803-8414-8

Type

conf

DOI

10.1109/FREQ.2004.1418424

Filename

1418424