Temperature Effect of a Heterojunction Bipolar Transistor (HBT) with an Emitter-Edge-Thinning Structure

Author

Chen, T.P. ; Chu, K.Y. ; Chen, L.Y. ; Tsai, T.H. ; Hung, C.W. ; Liu, W.C.

Author_Institution

Nat. Cheng-Kung Univ., Tainan

fYear

2007

fDate

20-22 Dec. 2007

Firstpage

717

Lastpage

720

Abstract

The temperature-dependent DC characteristics and noise performance of an interesting InGaP/GaAs heterojunction bipolar transistor (HBT) with emitter-edge-thinning structure are demonstrated. Experimentally, due to the emitter-edge-thinning structure, higher current gains and wider collector current operation regime over the measured temperature range (300 ~ 400 K) are observed as compared to the conventional device. In addition, the studied device exhibits lower base current ideality factors, better thermal stabilities on DC current gains, lower base surface recombination current densities, and improved device reliability. Therefore, the studied device is suitable for low-power and high-temperature electronic applications.

Keywords

current density; gallium arsenide; heterojunction bipolar transistors; high-temperature electronics; indium compounds; low-power electronics; semiconductor device reliability; thermal stability; HBT; InGaP-GaAs; device reliability; emitter-edge-thinning structure; heterojunction bipolar transistor; low-power high-temperature electronics; surface recombination current density; temperature-dependent DC characteristics; thermal stability; Current density; Current measurement; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; Spontaneous emission; Temperature distribution; Temperature measurement; Thermal factors; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on

Conference_Location

Tainan

Print_ISBN

978-1-4244-0637-1

Electronic_ISBN

978-1-4244-0637-1

Type

conf

DOI

10.1109/EDSSC.2007.4450226

Filename

4450226