Schottky-Gated Field Effect Transistors Based on GaN Nanowires

Because of their excellent crystalline quality, high surface-to-volume ratio, and direct bandgap, GaN nanowires (NWs) grown by molecular beam epitaxy (MBE) are a promising platform for the development of nanoscale devices for a variety of optoelectronic, electronic, sensing, and nanomechanical applications. Understanding and harnessing the field effect behavior of GaN NWs is a crucial step in the evolution of such devices. This paper investigates an alternative approach to GaN FETs by fabricating and testing top-gated metal-semiconductor FETs based on Si-doped GaN NWs grown by catalyst-free MBE. Improvements to the MESFET design and to the analysis of NW FET behavior are proposed.