Measurement of Silicon Nanowires Carrier Mobility and Its Size Dependence

Author

Gunawan, O. ; Sekaric, L. ; Majumdar, A. ; Rooks, M. ; Appenzeller, J. ; Sleight, J.W. ; Guha, S. ; Haensch, W.

Author_Institution

Res. Div., T.J. Watson Res. Center, IBM, Yorktown Heights, NY

fYear

2008

fDate

23-25 June 2008

Firstpage

189

Lastpage

190

Abstract

We perform the first direct capacitance measurements of silicon nanowires (Si-NWs) and the determination of field carrier mobilities (for both electrons and holes) and their NW size dependence in undoped-channel Si-NW field-effect transistors (FETs) at room temperature. We use a two-FET method for accurate extraction of the intrinsic channel resistance and capacitance of the Si-NWs. The devices used in this study were fabricated using a top-down method to create Si-NW FETs with up to 1000 wires in parallel for increasing the raw capacitance while maintaining excellent control on device dimensions and series resistance. We then study and compare the NW mobility values with those of the known universal mobility curves for bulk silicon.

Keywords

capacitance measurement; elemental semiconductors; field effect transistors; nanowires; silicon; Si; capacitance measurements; field carrier mobilities; intrinsic channel capacitance; intrinsic channel resistance; nanowire size dependence; silicon nanowires; temperature 293 K to 298 K; two-FET method; undoped-channel Si-NW field-effect transistors; Capacitance measurement; Charge carrier processes; Electron mobility; FETs; Nanowires; Performance evaluation; Silicon; Size measurement; Temperature dependence; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2008

Conference_Location

Santa Barbara, CA

ISSN

1548-3770

Print_ISBN

978-1-4244-1942-5

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2008.4800797

Filename

4800797