Design of voltage control oscillator for 5.2 GHz in 0.35 μm SiGe BiCMOS technology

Author

Chen, Wen-Shan ; Hsieh, Hsin-Yen ; Lin, Chi-Huang

Author_Institution

Southern Taiwan Univ., Tainan

fYear

2007

fDate

20-22 Dec. 2007

Firstpage

957

Lastpage

959

Abstract

This paper presents the design and the exploratory measurements of a fully integrated VCO for 5.2 GHz applications. The presented circuit is implemented in 0.35 μm SiGe BiCMOS technology from TSMC. The current drawn from 2.5 V is 19mA for the VCO. It has a tuning range of 900 MHz with a control voltage from 0 to 2 V. The measured phase noise is -108.6 dBc/Hz at 1 MHz offset from the 5.2 GHz, and a figure of merit of-166.15 dBc/Hz were obtained. The measured output power at 5.2 GHz are -18.8 dBm.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; integrated circuit design; integrated circuit measurement; microwave integrated circuits; microwave oscillators; voltage-controlled oscillators; BiCMOS technology; SiGe; TSMC; VCO design; current 19 mA; frequency 5.2 GHz; phase noise measurement; power measurement; size 0.35 μm; tuning; voltage 2.5 V; voltage control oscillator; BiCMOS integrated circuits; Circuit optimization; Germanium silicon alloys; Integrated circuit measurements; Integrated circuit technology; Noise measurement; Silicon germanium; Tuning; Voltage control; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on

Conference_Location

Tainan

Print_ISBN

978-1-4244-0636-4

Electronic_ISBN

978-1-4244-0637-1

Type

conf

DOI

10.1109/EDSSC.2007.4450285

Filename

4450285