Broadband Terahertz Emission from Dual-Grating Gate HEMT´s-Mechanism and Emission Spectral Profile

Author

Nishimura, T. ; Handa, H. ; Tsuda, H. ; Suemitsu, T. ; Meziani, Y.M. ; Knap, W. ; Otsuji, T. ; Sano, E. ; Ryzhii, V. ; Satou, A. ; Popov, V.V. ; Coquillat, D. ; Teppe, F.

Author_Institution

Res. Inst. of Electr. Commun., Tohoku Univ., Sendai

fYear

2008

fDate

23-25 June 2008

Firstpage

263

Lastpage

264

Abstract

We observed and characterized broadband terahertz emission from our original plasmon-resonant emitter structured by dual-grating gate high electron mobility transistors (HEMT´s). The samples are fabricated in two structures: a standard single-heterostructure HEMT with metallic grating gates and a double-decked (DD) HEMT with semiconducting 2-dimensional electron gas (2DEG) grating gates. The mechanism of the broadband emission originated from multi modes of incoherent/coherent plasmon excitations is revealed.

Keywords

electron gas; excited states; high electron mobility transistors; submillimetre wave generation; 2D electron gas grating gates; InGaP-InGaAs-GaAs; broadband terahertz emission; dual-grating gate HEMT; emission spectral profile; incoherent/coherent plasmon excitations; mechanism spectral profile; plasmon-resonant emitter; Broadband antennas; Electromagnetic scattering; Electrons; Gratings; HEMTs; Optical scattering; Plasma temperature; Plasmons; Quantum computing; Solid state circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2008

Conference_Location

Santa Barbara, CA

ISSN

1548-3770

Print_ISBN

978-1-4244-1942-5

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2008.4800831

Filename

4800831