• DocumentCode
    2984563
  • Title

    Simulating Pseudomorphic HEMTs: Optimizing Performance to Achieve Multi-terahertz Operating Frequencies

  • Author

    Akis, R. ; Ayubi-Moak, J.S. ; Faralli, N. ; Goodnick, S.M. ; Ferry, D.K. ; Saraniti, M.

  • Author_Institution
    Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ
  • fYear
    2008
  • fDate
    23-25 June 2008
  • Firstpage
    267
  • Lastpage
    268
  • Abstract
    In summary, we show that properly scaled HEMT devices can operate will into the THz regime, and provide a viable device option in this spectral region. These results are also important for logic devices desired for operation in the Tbs regime, as the cutoff frequency fT is intimately related to the logic delay time in a switching transistor.
  • Keywords
    delay systems; high electron mobility transistors; logic devices; logic delay time; logic devices; multi terahertz; operating frequencies; pseudomorphic HEMT; switching transistor; Cutoff frequency; Electron devices; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Logic devices; MODFETs; Monte Carlo methods; PHEMTs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2008
  • Conference_Location
    Santa Barbara, CA
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-1942-5
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2008.4800833
  • Filename
    4800833
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2984563