DocumentCode
2985456
Title
Photonic crystal lasers with quantum dots active regions and their temperature dependence
Author
Yang, Tian ; O´Brien, J.D. ; Lipson, Samuel ; Deppe, D.G.
Author_Institution
Dept. of Electr. Eng.-Electrophys., Southern California Univ., Los Angeles, CA, USA
Volume
3
fYear
2005
fDate
22-27 May 2005
Firstpage
1799
Abstract
Optically-pumped photonic crystal cavities with InAs quantum dots active regions lase near 1310 nm at room temperature. Absorbed threshold pump powers as low as 25 μm, and a T0 value of 17 K are obtained.
Keywords
III-V semiconductors; indium compounds; laser cavity resonators; optical pumping; photonic crystals; quantum dot lasers; thermo-optical effects; 1310 nm; 17 K; 25 muW; 293 to 298 K; InAs; InAs quantum dots; optically-pumped cavities; photonic crystal cavities; photonic crystal lasers; quantum dot active regions; room temperature; temperature dependence; Atom optics; Biomembranes; Optical buffering; Optical pumping; Photonic crystals; Pump lasers; Quantum dot lasers; Stimulated emission; Temperature dependence; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN
1-55752-795-4
Type
conf
DOI
10.1109/CLEO.2005.202279
Filename
1573345
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