DocumentCode
298585
Title
High conductivity CdS thin films formed by gas assisted chemical vapor transport (CVTG)
Author
Sebastian, P.J. ; Sanchez, A.
Author_Institution
Lab. de Energia Solar, IIM-UNAM, Morelos, Mexico
Volume
1
fYear
1994
fDate
5-9 Dec 1994
Firstpage
342
Abstract
Formation of high conductivity CdS thin films by a new chemical vapor transport (CVT) method, employing a carrier gas, is reported for the first time. The film deposition was carried out in a quartz tube kept inside a tubular furnace. The chemical vapor transport was done using a screen printed film of CdS with CdCl2 as the flux incorporated in the film. The nature of the film depends on parameters like condensation temperature, cooling rate, substrate position etc. The extrinsic films showed an electrical conductivity of the order of 101 (Ω cm)-1 and the films which showed intrinsic nature exhibited a conductivity of the order of 10-8 (Ω cm)-1. The new CVTG system is designed and further studies are in progress to obtain thin film solar cell structures employing this technique
Keywords
CVD coatings; II-VI semiconductors; cadmium compounds; chemical vapour deposition; semiconductor device testing; semiconductor thin films; solar cells; 1E-8 (ohmcm)-1; 1E1 (ohmcm)-1; CVD; CdCl2; CdS; carrier gas; condensation temperature; cooling rate; electrical conductivity; extrinsic films; film deposition; flux; gas assisted chemical vapor transport; quartz tube; screen printed film; solar cell structures; substrate position; thin film semiconductor; tubular furnace; Argon; Chemical vapor deposition; Conductive films; Conductivity; Cooling; Furnaces; Optical films; Photovoltaic cells; Substrates; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location
Waikoloa, HI
Print_ISBN
0-7803-1460-3
Type
conf
DOI
10.1109/WCPEC.1994.519971
Filename
519971
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