Large area module performance and identification and control of p-i interface-correlated device degradation and further improvement in stabilized efficiencies of single-junction a-Si solar cells

Author

Xi, Jianping ; Shugar, Daniel ; Voiltrauer, H.

Author_Institution

Adv. Photovoltaic Systems Inc., Davis, CA, USA

Volume

1

fYear

1994

fDate

5-9 Dec 1994

Firstpage

401

Abstract

On a large scale, APS´ PVUSA array has been in operation for two years now and continues to produce power in excess of its original specifications. Its output measured in October 1994 was 423 kW_AC. On a laboratory scale, in the last IEEE PVSC we reported our progress in improving the stability of a-Si based solar cells and in establishing 7.7% stabilized efficiency in single-junction devices. The best of these devices had a relatively low Voc of about 0.8 volts. By further optimization of the p layer, and p-i interface we have produced single junction devices with 0.86 volt Voc and 8.5% stabilized efficiency. Stable output in these devices was obtained after a very brief, 10 hour light soak

Keywords

amorphous semiconductors; elemental semiconductors; p-n junctions; semiconductor device testing; silicon; solar cell arrays; solar cells; 0.8 V; 10 h; 423 kW; 7.7 percent; 8.5 percent; Si; Voc; a-Si solar cells; amorphous semiconductor; large area module performance; light soak testing; open-circuit voltage; optimization; p layer; p-i interface; single-junction; stability; stabilized efficiency; Buffer layers; Conducting materials; Degradation; Laboratories; Performance loss; Photovoltaic cells; Photovoltaic systems; Power generation; Stability; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

0-7803-1460-3

Type

conf

DOI

10.1109/WCPEC.1994.519983

Filename

519983