The utilization of microcrystalline Si and SiC for the efficiency improvement in a-Si solar cells

Author

Ma, W. ; Saida, T. ; Lim, C.C. ; Aoyama, S. ; Okamoto, H. ; Hamakawa, Y.

Author_Institution

Fac. of Eng. Sci., Osaka Univ., Japan

Volume

1

fYear

1994

fDate

5-9 Dec 1994

Firstpage

417

Abstract

A systematic investigations on the modification of interface potential by introducing doped microcrystalline Si (μc-Si) and it´s carbon alloys (μc-SiC) at the TCO/p a-SiC interface has been made. It has been shown that a remarkable increase of the built-in potential with insertion of these materials. A series of technical data on the improvement of photovoltaic characteristics achieved by employing the microcrystalline materials are presented. The mechanism of improvements is discussed on the basis of systematic diagnostics on the interface properties

Keywords

amorphous semiconductors; elemental semiconductors; semiconductor materials; silicon; silicon compounds; solar cells; SiC; SiC-Si-Si; TCO/p a-SiC interface; a-Si solar cells; a-SiC/a-Si/n-Si solar cell; built-in potential; doped microcrystalline Si; efficiency improvement; interface potential modification; microcrystalline Si; Circuits; Electrodes; Energy barrier; Heterojunctions; Photovoltaic cells; Photovoltaic systems; Silicon alloys; Silicon carbide; Solar power generation; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

0-7803-1460-3

Type

conf

DOI

10.1109/WCPEC.1994.519987

Filename

519987