A Bondpad-Size Narrowband LNA for Digital CMOS

Author

Borremans, J. ; Wambacq, P. ; Van der Plas, G. ; Rolain, Y. ; Kuijk, M.

Author_Institution

Vrije Univ., Brussels

fYear

2007

fDate

3-5 June 2007

Firstpage

677

Lastpage

680

Abstract

The need for a high level of integration in wireless and multi-standard radios, as well as the expensive area in downscaled CMOS pushes towards low-area circuit solutions. Feedback-type inductorless LNAs are such an example. This paper demonstrates a bondpad-size feedback type narrowband LNA using only one stacked inductor. The gain is 20.8 dB at 3.4 GHz with a noise figure of 2.2 dB. This solution is many times smaller than a classical LNA configuration with several inductors, while obtaining similar performance. It is thus an appealing solution for low-area radio integration in digital CMOS.

Keywords

CMOS digital integrated circuits; feedback amplifiers; inductors; integrated circuit design; low noise amplifiers; microwave amplifiers; bondpad-size narrowband LNA; digital CMOS; feedback-type inductorless LNA; frequency 3.4 GHz; gain 20.8 dB; low-noise amplifier; multistandard radios; noise figure 2.2 dB; shunt-shunt feedback; stacked inductor; Bonding; Circuit topology; Feedback amplifiers; Feedback circuits; Gain; Inductors; Linearity; Narrowband; Noise figure; Radio frequency; CMOS; Low-noise amplifier (LNA); low area; narrowband; shunt-shunt feedback; stacked inductor;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2007 IEEE

Conference_Location

Honolulu, HI

ISSN

1529-2517

Print_ISBN

1-4244-0530-0

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2007.380973

Filename

4266521