A 45-to-60-GHz Two-Band SiGe: C VCO for Millimeter-Wave Applications

Author

Lee, Ja-Yol ; Lee, Sang-Heung ; Kim, Haecheon ; Yu, Hyun-Kyu

Author_Institution

ETRI, Daejeon

fYear

2007

fDate

3-5 June 2007

Firstpage

709

Lastpage

712

Abstract

A 45 - 60-GHz two-band double cross-coupled differential VCO is designed and fabricated using 0.25 mum SiG:C BiCMOS process technology whose f_max is greater than 200 GHz. The VCO provides tuning ranges of 44.9 - 48.9 GHz when its bias current is 13 mA and of 58 - 60.4 GHz when a bias current of 7 mA draws into the VCO. The phase noises of the VCO are measured as - 99 dBc/Hz from 48.86 GHz and - 93 dBc/Hz from 60.32 GHz, at 10 MHz offset, respectively. The VCO shows moderate FOMs of 156 dBc at 60.32 GHz and 158 dBc at 48.86 GHz.

Keywords

BiCMOS integrated circuits; millimetre wave oscillators; phase noise; voltage-controlled oscillators; BiCMOS process technology; current 13 mA; frequency 45 GHz to 60 GHz; millimeter-wave application; phase noise; size 0.25 mum; two-band SiGe:C VCO; voltage controlled oscillator; BiCMOS integrated circuits; CMOS technology; Frequency; Germanium silicon alloys; Millimeter wave technology; Noise measurement; Phase noise; Silicon germanium; Tuning; Voltage-controlled oscillators; 60 GHz; Phase Noise; SiGe:C; VCO; receiver;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2007 IEEE

Conference_Location

Honolulu, HI

ISSN

1529-2517

Print_ISBN

1-4244-0530-0

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2007.380981

Filename

4266529