An algorithm for finding all the DC solutions of short-channel MOS transistor circuits

A broad class of electronic circuits containing short-channel MOS transistors, having multiple DC solutions, is considered in this paper. The transistors are represented by the nth power law model, developed by Sakurai and Newton, that is valid at least down to 0.25 μm channel length. The algorithm operates on original nonlinearities and no piecewise-linear approximation is used. The idea of successive contraction, division and elimination is adopted and a new contraction procedure is developed. Under the realistic assumption that we identify two solution voltages that differ less than 0.001 V the algorithm enables us to find all the DC solutions. A numerical example shows effectiveness of this approach