Plasma-chemical deposition of nitrides out of halogenides

Constructions of MW PGs and of reactors relevanted have been worked out, modes of ultrafine powders´ and films´ deposition of some metal nitrides out of their chlorides in nitrogen plasma now under atmosphere pressure have been researched. Process of film´s formation has diffusional character, growth rate has been controlled by diffusion transfer of volatile halogenides of metal towards substrate´s surface. During its formation the film undergoes the stages of nucleation and growth of nuclei. As the temperature of substrate is less than 1000 K processes of coalescence and of secondary recrystallization in a growing layer being hindered, that have resulted in a sharping decrease of a grain size. Values of deposition rate achieved have been about (10² -10³) A/s. In case of nitride and oxide temperature regions be separated the films obtained have been monophase and disoxidic ones