DocumentCode
2990342
Title
Evolution of relief of asperited polycrystalline silicon surface in the process of thermal oxidation
Author
Perov, G.V. ; Salman, E.G. ; Ignatov, A.N.
Author_Institution
Siberia State Univ. of Tech. & Inf., Russia
fYear
2000
fDate
2000
Firstpage
27
Lastpage
30
Abstract
A simple phenomenological model of changing asperity surface, in the process of thermal oxidation of polycrystalline silicon, is examined. This allows to prognosticate and consequently deliberately change electrical characteristics of the dielectric layer
Keywords
elemental semiconductors; oxidation; silicon; surface topography; Si; changing asperity surface; dielectric layer; electrical characteristics; polysilicon surface; simple phenomenological model; surface relief evolution; thermal oxidation; Aggregates; Conductivity; Dielectric films; Electric variables; Ellipsoids; Oxidation; Silicon compounds; Temperature; Thermal factors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Instrument Engineering Proceedings, 2000. APEIE-2000. Volume 1. 2000 5th International Conference on Actual Problems of
Conference_Location
Novosibirsk
Print_ISBN
0-7803-5903-8
Type
conf
DOI
10.1109/APEIE.2000.913080
Filename
913080
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