• DocumentCode
    2990714
  • Title

    GaN electronic devices for future systems

  • Author

    Binari, S.C.

  • Author_Institution
    Naval Res. Lab., Washington, DC, USA
  • Volume
    3
  • fYear
    1999
  • fDate
    13-19 June 1999
  • Firstpage
    1081
  • Abstract
    There is an extensive effort to develop GaN and the related alloys for electronic device applications. The primary focus is the development of microwave power devices, and in this area, AlGaN/GaN HEMTs have demonstrated record output power densities. The motivation for pursuing GaN for microwave power applications and the current status of the GaN electronic device technology are presented.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN HEMT; GaN electronic device; microwave power transistor; Aluminum gallium nitride; Electric breakdown; Epitaxial layers; Gallium nitride; Gold; HEMTs; MODFETs; Metallization; Microwave devices; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1999 IEEE MTT-S International
  • Conference_Location
    Anaheim, CA, USA
  • Print_ISBN
    0-7803-5135-5
  • Type

    conf

  • DOI
    10.1109/MWSYM.1999.779575
  • Filename
    779575
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2990714